? 2011 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c, r gs = 1m 500 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c 112 a i dm t c = 25 c, pulse width limited by t jm 330 a i a t c = 25 c 66a e as t c = 25 c3j dv/dt i s i dm , v dd v dss , t j 150 c 35 v/ns p d t c = 25 c 1500 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60 hz, rms, t = 1minute 2500 v~ i isol 1ma, t = 1s 3000 v~ m d mounting torque for base plate 1.5/13 nm/lb.in. terminal connection torque 1.3/11.5 nm/lb.in. weight 30 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 500 v v gs(th) v ds = v gs , i d = 8ma 3.0 5.0 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 50 a t j = 125 c 6 ma r ds(on) v gs = 10v, i d = 66a, note 1 39 m IXFN132N50P3 v dss = 500v i d25 = 112a r ds(on) 39m t rr 250ns ds100316(03/11) n-channel enhancement mode avalanche rated fast intrinsic rectifier advance technical information polar3 tm hiperfet tm power mosfet minibloc e153432 g d s s g = gate d = drain s = source either source terminal s can be used as the source terminal or the kelvin source (gate return) terminal. features z international standard package z minibloc with aluminum nitride isolation z avalanche rated z low package inductance z fast intrinsic rectifier z low r ds(on) and q g advantages z easy to mount z space savings applications z dc-dc converters z battery chargers z switch-mode and resonant-mode power supplies z uninterrupted power supplies z ac motor drives z high speed power switching applications
IXFN132N50P3 ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 66a, note 1 68 115 s c iss 18.6 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 1750 pf c rss 5.0 pf r gi gate input resistance 1.0 t d(on) 44 ns t r 9 ns t d(off) 72 ns t f 8 ns q g(on) 250 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 66a 90 nc q gd 52 nc r thjc 0.083 c/w r thcs 0.05 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 132 a i sm repetitive, pulse width limited by t jm 530 a v sd i f = 100a, v gs = 0v, note 1 1.5 v t rr 250 ns q rm 1.9 c i rm 16.4 a ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 66a r g = 1 (external) i f = 66a, -di/dt = 100a/ s v r = 100v, v gs = 0v advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. (m4 screws (4x) supplied) sot-227b (ixfn) outline
? 2011 ixys corporation, all rights reserved IXFN132N50P3 fig. 1. output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 0123456 v ds - volts i d - amperes v gs = 10v 8v 5 v 6 v 7 v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 0 5 10 15 20 25 v ds - volts i d - amperes v gs = 10v 8v 6 v 5 v 7 v fig. 3. output characteristics @ t j = 125oc 0 20 40 60 80 100 120 140 02468101214 v ds - volts i d - amperes 5 v 6v 4v v gs = 10v 8v 7v fig. 4. r ds(on) normalized to i d = 66a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 132a i d = 66a fig. 5. r ds(on) normalized to i d = 66a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 0 50 100 150 200 250 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 20 40 60 80 100 120 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
IXFN132N50P3 ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. input admittance 0 20 40 60 80 100 120 140 160 180 200 3.54.04.55.05.56.06.57.07.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200 220 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 350 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200 250 q g - nanocoulombs v gs - volts v ds = 250v i d = 66a i g = 10ma fig. 11. capacitance 1 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1000 10 100 1,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 100s 1ms r ds(on) limit
? 2011 ixys corporation, all rights reserved IXFN132N50P3 ixys ref: f_132n50p3(k9)03-17-11 fig. 13. maximum transient thermal impedance 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 13. maximum transient thermal impedance aaaaa 0.2
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